High‐resolution XEOL spectroscopy setup at the X‐ray absorption spectroscopy beamline P65 of PETRA III
Biller, R.
Pfeiffelmann, T.
Ritter, K.
Falk, H. H.
Wang, T.
Siebentritt, S.
Welter, E.
Schnohr, C. S.
DOI: https://doi.org/10.1107/S1600577522007287
Persistent URL: http://resolver.sub.uni-goettingen.de/purl?gldocs-11858/10453
Pfeiffelmann, T.; 1Universität LeipzigFelix-Bloch-Institut für FestkörperphysikLinnéstraße 5 Leipzig 04103 Germany
Ritter, K.; 1Universität LeipzigFelix-Bloch-Institut für FestkörperphysikLinnéstraße 5 Leipzig 04103 Germany
Falk, H. H.; 1Universität LeipzigFelix-Bloch-Institut für FestkörperphysikLinnéstraße 5 Leipzig 04103 Germany
Wang, T.; 3University of LuxembourgLaboratory for Photovoltaics, Department of Physics and Materials ScienceRue du Brill 41 Belvaux 4422 Luxembourg
Siebentritt, S.; 3University of LuxembourgLaboratory for Photovoltaics, Department of Physics and Materials ScienceRue du Brill 41 Belvaux 4422 Luxembourg
Welter, E.; 2Deutsches Elektronen-Synchrotron DESYNotkestr. 85 Hamburg 22607 Germany
Schnohr, C. S.; 1Universität LeipzigFelix-Bloch-Institut für FestkörperphysikLinnéstraße 5 Leipzig 04103 Germany
Abstract
A newly designed setup to perform steady‐state X‐ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X‐ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He‐flow cryostat and state‐of‐the‐art optical detection system, which covers a wide wavelength range of 300–1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup functioning, low‐temperature XEOL studies on polycrystalline CuInSe2 thin film, single‐crystalline GaN thin film and single‐crystalline ZnO bulk semiconductor samples are performed.
X‐ray excited optical luminescence (XEOL) spectroscopy is increasingly important to understand the interplay between the optical properties, structure and chemical composition, providing insights into the mechanism of radiative recombination for a wide range of materials. This study demonstrates a newly implemented setup to perform steady‐state XEOL and simultaneous XEOL and XAFS characterizations at beamline P65 of PETRA III.